ASTM F996-98(2003) PDF

ASTM F996-98(2003) PDF

Name:
ASTM F996-98(2003) PDF

Published Date:
01/01/2003

Status:
Active

Description:

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

Publisher:
ASTM International

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

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Choose Document Language:
$17.4
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Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
File Size : 1 file , 89 KB
Note : This product is unavailable in Russia, Ukraine, Belarus
Number of Pages : 7
Published : 01/01/2003

History

ASTM F996-11(2018)
Published Date: 03/01/2018
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics (Withdrawn 2023)
$22.5
ASTM F996-11
Published Date: 01/01/2011
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
$17.4
ASTM F996-10
Published Date: 05/01/2010
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
$17.4
ASTM F996-98(2003)
Published Date: 01/01/2003
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
$17.4
ASTM F996-98
Published Date: 05/10/1998
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
$18.6

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