BS IEC 60747-7:2000 PDF

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IEC 60747-7. Semiconductor devices. Discrete devices. Part 7. Bipolar transistors (BTRs)

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Discrete semiconductor devices and integrated circuits-Bipolar transistors

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Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level

Published Date: 01/15/1979

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level

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Specification for harmonized system of quality assessment for electronic components. Blank detail specification: bipolar transistors for switching applications

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