BS ISO 14701:2018 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6? cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
Cross References:ISO 18115-1
ISO 18116
GUM:1995
ISO/TR 18392
ISO/IEC Guide 98-3:2008
All current amendments available at time of purchase are included with the purchase of this document. | File Size : | 1
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| ISBN(s) : | 9780580519499 |
| Note : | This product is unavailable in Russia, Ukraine, Belarus |
| Number of Pages : | 24 |
| Product Code(s) : | 30368967, 30368967, 30368967 |
| Published : | 11/05/2018 |
| Same As : | BS ISO 14701:2018 |
