BS E9372:1976 PDF

Published Date: 01/15/1979

Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level

Published Date: 07/15/1993

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications

Published Date: 12/15/1988

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz

Published Date: 2019

Addendum a to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum aa to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum ab to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum ac to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2019

Addendum ad to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)

Published Date: 2020

Addendum ae to Standard 189.1-2017 for the Design of High-Performance Green Buildings Except Low-Rise Residential Buildings (ANSI Approved; ICC, USGBC and IES Co-sponsored)