BS EN 60749-28:2017 establishes the procedure for testing, evaluating, and classifying
devices and microcircuits according to their susceptibility (sensitivity) to damage or
degradation by exposure to a defined field-induced charged device model (CDM) electrostatic
discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic
wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip
modules (MCMs) containing any of these devices are to be evaluated according to this
document. To perform the tests, the devices are assembled into a package similar to that
expected in the final application. This CDM document does not apply to socketed discharge
model testers. This document describes the field-induced (FI) method. An alternative, the
direct contact (DC) method, is described in Annex I.
The purpose of this document is to establish a test method that will replicate CDM failures
and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of
device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD
sensitivity levels.
Cross References:IEC 60749-26:2013 ED3
EN 60749-26 (IEC 60749-26:2013) AS
All current amendments available at time of purchase are included with the purchase of this document. | File Size : | 1
file
, 3.3 MB |
| ISBN(s) : | 9780580536786 |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Number of Pages : | 48 |
| Product Code(s) : | 30084228, 30084228, 30084228 |
| Published : | 07/10/2017 |
| Same As : | BS EN 60749-28:2017 |
