Rules for the preparation of detail specifications for semiconductor devices of assessed quality: rectifier bridges. Ambient rated, single phase, in solid (plastics) encapsulation
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: medium current general purpose thyristors (1-100 ampere rating)
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current general purpose thyristors (greater than 50 ampere rating)
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: case rated bi-directional triode thyristors (triacs)
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Facial recognition technology. Ethical use and deployment in video surveillance-based systems. Code of practice
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low noise, low power microwave transistors
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Oil circuit-breakers for alternating-current circuits up to and including 660 volts
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low frequency, low power transistors
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high power transistors for linear applications
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Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
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