Compound Semiconductors 1998 Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998 PDF

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Authors: H Sakaki, J.C. Woo, N Yokoyama, Y Harayama