DANSK DSF/PREN IEC 62819 PDF

DANSK DSF/PREN IEC 62819 PDF

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DANSK DSF/PREN IEC 62819 PDF

Published Date:

Status:
[ Draft-Obsolete ]

Description:

Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability

Publisher:
Dansk Standard

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

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$14.7
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This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).


Edition : 21
File Size : 1 file , 1.8 MB
Number of Pages : 50
Product Code(s) : DSF-036, DSF-036

History

DANSK DSF/PREN IEC 62819
Published Date:
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
$14.7
DANSK DS/EN IEC 62819
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