Name:
DANSK DSF/PREN IEC 62819 PDF
Published Date:
Status:
[ Draft-Obsolete ]
Publisher:
Dansk Standard
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).
| Edition : | 21 |
| File Size : | 1 file , 1.8 MB |
| Number of Pages : | 50 |
| Product Code(s) : | DSF-036, DSF-036 |