DANSK DSF/PREN IEC 63275-2 PDF

Name:
DANSK DSF/PREN IEC 63275-2 PDF

Published Date:

Status:
[ Draft ]

Description:

Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation

Publisher:
Dansk Standard

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

DRAFT

This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Edition :	21
File Size :	1 file , 1.1 MB
Number of Pages :	12
Product Code(s) :	DSF-009, DSF-009

History

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