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DANSK DSF/PREN IEC 63275-2 PDF

DANSK DSF/PREN IEC 63275-2 PDF

Name:
DANSK DSF/PREN IEC 63275-2 PDF

Published Date:

Status:
[ Draft ]

Description:

Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation

Publisher:
Dansk Standard

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$8.7
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DRAFT

This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.


Edition : 21
File Size : 1 file , 1.1 MB
Number of Pages : 12
Product Code(s) : DSF-009, DSF-009

History

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