Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects

Publisher:
British Standard / International Electrotechnical Commission

Document status:

Active

Format:

Electronic (PDF)

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10 minutes

Delivery time (for Russian version):

200 business days

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Scope: This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Cross References:
ISO 15247:2015
ISO 24173

All current amendments available at time of purchase are included with the purchase of this document.

File Size :	1 file , 5.4 MB
ISBN(s) :	9780580964138
Number of Pages :	26
Product Code(s) :	30351626, 30351626, 30351626
Published :	05/10/2019

BS IEC 63068-1:2019 PDF

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects

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