BS IEC 63068-1:2019 PDF

BS IEC 63068-1:2019 PDF

Name:
BS IEC 63068-1:2019 PDF

Published Date:
05/10/2019

Status:
Active

Description:

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects

Publisher:
British Standard / International Electrotechnical Commission

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

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$79.248
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Scope: This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Cross References:
ISO 15247:2015
ISO 24173


All current amendments available at time of purchase are included with the purchase of this document.
File Size : 1 file , 5.4 MB
ISBN(s) : 9780580964138
Number of Pages : 26
Product Code(s) : 30351626, 30351626, 30351626
Published : 05/10/2019

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