Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection

Publisher:
British Standard / International Electrotechnical Commission

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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BS IEC 63068-2:2019 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers.

Cross References:
ISO 24173

All current amendments available at time of purchase are included with the purchase of this document.

File Size :	1 file , 2.7 MB
ISBN(s) :	9780580513749
Number of Pages :	28
Product Code(s) :	30366380, 30366380, 30366380
Published :	02/08/2019

BS IEC 63068-2:2019 PDF

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection

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