Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence

Publisher:
British Standard / International Electrotechnical Commission

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Active

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Electronic (PDF)

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10 minutes

Delivery time (for Russian version):

200 business days

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This part of IEC 63068 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

All current amendments available at time of purchase are included with the purchase of this document.

File Size :	1 file , 1.7 MB
ISBN(s) :	9780539021363
Number of Pages :	28
Product Code(s) :	30382425, 30382425, 30382425
Published :	07/24/2020

BS IEC 63068-3:2020 PDF

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence

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