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IEC 60747-9 Ed. 3.0 b:2019 PDF

IEC 60747-9 Ed. 3.0 b:2019 PDF

Name:
IEC 60747-9 Ed. 3.0 b:2019 PDF

Published Date:
11/13/2019

Status:
Active

Description:

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Publisher:
International Electrotechnical Commission

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$125.1
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IEC 60747-9 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
Edition : 3.0
File Size : 1 file , 4 MB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 160
Published : 11/13/2019

History

IEC 60747-9 Ed. 3.0 b:2019
IEC 60747-9 Ed. 3.0 b:2019
Published Date: 11/13/2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
$125.1
IEC 60747-9 Ed. 2.0 b:2007
IEC 60747-9 Ed. 2.0 b:2007
Published Date: 09/26/2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
$95.1
IEC 60747-9 Ed. 1.1 b:2001
IEC 60747-9 Ed. 1.1 b:2001
Published Date: 11/20/2001
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) CONSOLIDATED EDITION
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