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IEC 62417 Ed. 1.0 b:2010 PDF

IEC 62417 Ed. 1.0 b:2010 PDF

Name:
IEC 62417 Ed. 1.0 b:2010 PDF

Published Date:
04/22/2010

Status:
Active

Description:

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Publisher:
International Electrotechnical Commission

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$7.5
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IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
Edition : 1.0
File Size : 1 file , 880 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 16
Published : 04/22/2010

History

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