Name:
IEC 63229 Ed. 1.0 en:2021 PDF
Published Date:
04/07/2021
Status:
Active
Publisher:
International Electrotechnical Commission
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
| Edition : | 1.0 |
| File Size : | 1 file , 2.6 MB |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Number of Pages : | 21 |
| Published : | 04/07/2021 |
