IEC 63284 Ed. 1.0 b:2022 PDF

Name:
IEC 63284 Ed. 1.0 b:2022 PDF

Published Date:
04/01/2022

Status:
Active

Description:

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Publisher:
International Electrotechnical Commission

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.

Edition :	1.0
File Size :	1 file , 970 KB
ISBN(s) :	9782832211016
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	30
Published :	04/01/2022

History

Related products

IEC 60747-4-1 Ed. 1.0 en:2000

Published Date: 06/16/2000

Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification

$20.1

IEC 60747-7 Ed. 3.1 b:2019

Published Date: 09/23/2019

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

$174.6

IEC 60747-8 Ed. 3.1 en:2021

Published Date: 06/01/2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

$174.6

IEC 62899-503-3 Ed. 1.0 en:2021

Published Date: 08/01/2021

Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method

$28.5