Name:
IEC 63284 Ed. 1.0 b:2022 PDF
Published Date:
04/01/2022
Status:
Active
Publisher:
International Electrotechnical Commission
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
| Edition : | 1.0 |
| File Size : | 1 file , 970 KB |
| ISBN(s) : | 9782832211016 |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Number of Pages : | 30 |
| Published : | 04/01/2022 |