Name:
ISO 23812:2009 PDF
Published Date:
04/15/2009
Status:
Active
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
| File Size : | 1 file , 470 KB |
| Note : | This product is unavailable in Ukraine, Russia, Belarus |
| Published : | 04/15/2009 |
| Same As : | ISO 23812:2009 |
