MIL MIL-PRF-19500/295E PDF

Published Date: 02/05/2020

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

Published Date: 02/15/2012

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

Published Date: 03/01/2004

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

Published Date: 03/14/2003

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

Published Date: 09/19/2001

Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB

Published Date: 08/28/2019

Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, and AR Versions, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124RA, 1N1126RA, 1N1128RA , 1N3649R, and 1N3650R, JAN Only

Published Date: 02/11/1965

SEMICONDUCTOR DEVICE, DIODE, SILICON, RF MIXER TYPES JAN-1N53B, JAN-1N53BR, JAN-1N53BM AND JAN-1N53BMR (SUPERSEDING MIL-S-19500/186A)

Published Date: 03/22/2019

SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6950 THROUGH 1N6986, JAN, JANTX, JANTXV, AND JANS

Published Date: 1999

Published Date: 01/01/2005

Published Date: 01/01/2003

Published Date: 01/01/2009

Published Date: 01/01/2000

Published Date: 02/01/2008