Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages) 1N5415 Through 1N5420, JAN, JANTX, JANTXV, and JANS

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for silicon rectifier diodes. Four levels of products assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Provision for radiation hardness assurance (RHA) to four radiation ("M", "D", "R, and "H") test levels is provided for JANTXV and JANS product assurance.

File Size :	1 file , 470 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	22
Published :	10/17/2011

MIL MIL-PRF-19500/411N PDF

Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages) 1N5415 Through 1N5420, JAN, JANTX, JANTXV, and JANS

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