MIL MIL-PRF-19500/476E PDF

Published Date: 09/12/2018

Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 through 2N5116 and 2N5114UB through 2N5116UB, JAN, JANTX, and JANTXV

Published Date: 12/13/2013

Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 through 2N5116 and 2N5114UB through 2N5116UB, JAN, JANTX, and JANTXV

Published Date: 01/23/2012

Semiconductor Device, Field Effect Transistors, P-Channel, Silicon, Types 2N5114 through 2N5116 and 2N5114UB through 2N5116UB, JAN, JANTX, and JANTXV

Published Date: 01/09/2007

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV(SUPERSEDING MIL-PRF-19500/476C)

Published Date: 04/09/2003

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN, JANTX, AND JANTXV (SUPERSEDING MIL-PRF-19500/476B)(S/S BY MIL-PRF-19500/476D)

Published Date: 10/15/2001

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114-2N5116 & 2N5114UB-2N5116UB JAN JANTX AND JANTXV (SUPERSEDING MIL-PRF-19500/476A) (S/S BY MIL-PRF-19500/476C)

Published Date: 08/06/1999

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPES 2N5114 THROUGH 2N5116, JAN, JANTX, AND JANTXV (SUPERSEDING MIL-S-19500/476) (S/S BY MIL-PRF-19500/476B)

Published Date: 12/03/1993

RELAY, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT LOW LEVEL TO 2.0 AMPERE (LATCHING) WITH INTERNAL DIODES FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION (NO S/S DOCUMENT)

Published Date: 09/23/2016

Filter Elements, Non-Cleanable, Fluid Pressure, Hydraulic Line, 3500 PSI, 5 Micron Absolute,-65 Degrees F to 275 Degrees F, Aviation Ground Power Unit (AGPU)

Published Date: 05/15/2001

Nuclear power plants. Use of probabilistic safety asessment for the classification of instrumentation and control functions