Semiconductor Device, Diode Silicon, Bipolar Transient Voltage Suppressor, Encapsulated (Axial Lead Through-Hole and Surface Mount Packages) and Un-Encapsulated (Die), Types 1N6102 Through 1N6173, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die). These devices have a ten percent voltage tolerance (no "A" suffix). The suffix "A" denotes a five percent voltage tolerance.

File Size :	1 file , 280 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	21
Published :	06/05/2009

MIL MIL-PRF-19500/516E PDF

Semiconductor Device, Diode Silicon, Bipolar Transient Voltage Suppressor, Encapsulated (Axial Lead Through-Hole and Surface Mount Packages) and Un-Encapsulated (Die), Types 1N6102 Through 1N6173, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

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