Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, JAN, JANTX, JANTXV, JANS, and JANHC

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MILÛÒPRFÛÒ19500. One level of product assurance is provided for each unencapsulated device type (die) as specified in MILÛÒPRFÛÒ19500.

File Size :	1 file , 300 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	16
Published :	02/25/2014

MIL MIL-PRF-19500/553F PDF

Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, JAN, JANTX, JANTXV, JANS, and JANHC

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