Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, and 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

File Size :	1 file , 350 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	25
Published :	06/24/2010

MIL MIL-PRF-19500/557H PDF

Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, and 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

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