Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, and 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).

File Size :	1 file , 440 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	28
Published :	04/17/2013

MIL MIL-PRF-19500/592G PDF

Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, and 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

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