Transistor, Field Effect Radiation Hardened (Total Dose Only), N-Channel, Silicon, (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, and H

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (ÛÏRÛ, ÛÏFÛ, ÛÏGÛ, and ÛÏHÛ) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

File Size :	1 file , 1.1 MB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	27
Published :	05/06/2013

MIL MIL-PRF-19500/603J PDF

Transistor, Field Effect Radiation Hardened (Total Dose Only), N-Channel, Silicon, (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, and H

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