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MIL MIL-PRF-19500/614L PDF

MIL MIL-PRF-19500/614L PDF

Name:
MIL MIL-PRF-19500/614L PDF

Published Date:
08/30/2018

Status:
Active

Description:

Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS

Publisher:
Military Specifications and Standards

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
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Choose Document Language:
$8.7
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MIL-PRF-19500/614L covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions.
File Size : 1 file , 570 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 24
Published : 08/30/2018

History

MIL MIL-PRF-19500/614L
MIL MIL-PRF-19500/614L
Published Date: 08/30/2018
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
$8.7
MIL MIL-PRF-19500/614K
MIL MIL-PRF-19500/614K
Published Date: 07/02/2015
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
$5.4
MIL MIL-PRF-19500/614J
MIL MIL-PRF-19500/614J
Published Date: 04/18/2014
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
$5.4
MIL MIL-PRF-19500/614H
MIL MIL-PRF-19500/614H
Published Date: 05/13/2013
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
$5.4
MIL MIL-PRF-19500/614G
MIL MIL-PRF-19500/614G
Published Date: 03/19/2012
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
$5.4
MIL MIL-PRF-19500/614F
MIL MIL-PRF-19500/614F
Published Date: 11/19/2007
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7380 and 2N7381, JANTXV M, D, R, F, G, and H, JANS M, D, R, F, G, and H
$7.2
MIL MIL-PRF-19500/614E
MIL MIL-PRF-19500/614E
Published Date: 11/29/2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H(SUPERSEDING MIL-PRF-19500/614D)
$7.2
MIL MIL-PRF-19500/614D
MIL MIL-PRF-19500/614D
Published Date: 12/20/2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H (SUPERSEDING MIL-PRF-19500/614C)(S/S BY MIL-PRF-19500/614E)
$8.7
MIL MIL-PRF-19500/614C
MIL MIL-PRF-19500/614C
Published Date: 09/09/2003
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDNEND TRANSISTOR N-CHANNEL SILICON TYPES 2N7380 2N7381 JANTXV M D R F G H JANS M D R F G H (SUPERSEDING MIL-PRF-19500/614B) (S/S BY MIL-PRF-19500/614D)
$7.2
MIL MIL-PRF-19500/614B
MIL MIL-PRF-19500/614B
Published Date: 02/22/2002
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR N-CHANNEL SILICON TYPES 2N7380 AND 2N7381 JANTXV M D R F G AND H JANS M D R F G AND H (SUPERSEDING MIL-PRF-19500/614A) (S/S BY MIL-PRF-19500/614C)
$7.2
MIL MIL-PRF-19500/614A
MIL MIL-PRF-19500/614A
Published Date: 05/03/1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, MD, R, F, G AND H JANS M,D,R,F,G, AND H (SUPERSEDING MIL-S-19500/614) (S/S BY MIL-PRF-19500/614B)
$7.2
MIL MIL-S-19500/614
MIL MIL-S-19500/614
Published Date: 01/10/1994
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381 JANTXV M, D, R, F, G, AND H JANS M, D, R, F, G, AND H (S/S BY MIL-PRF-19500/614A)
$7.2

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