MIL MIL-PRF-19500/616B PDF

Published Date: 04/17/2009

Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6657 through 1N6659 JAN, JANTX, JANTXV, and JANS

Published Date: 03/27/2008

Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6657 through 1N6659 and 1N6657R through 1N6659R, JAN, JANTX, JANTXV, and JANS

Published Date: 03/12/2007

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS(SUPERSEDING MIL-PRF-19500/616D)

Published Date: 04/03/2006

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS(SUPERSEDING MIL-PRF-19500/616C)(S/S BY MIL-PRF-19500/616E)

Published Date: 03/21/2005

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/616B)(S/S BY MIL-PRF-19500/616D)

Published Date: 04/16/2004

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/616A) (S/S BY MIL-PRF-19500/616C)

Published Date: 10/20/1997

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST (SUPERSEDING MIL-S-19500/616) (S/S BY MIL-PRF-19500/616B)

Published Date: 03/19/2007

SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR(SUPERSEDING QML-19500-30)

Published Date: 01/25/2021

Semiconductor Device, Unitized, NPN, Silicon, Switching, Four Transistor Array, Types 2N6989, and 2N6990, JAN, JANTX, JANTXV, JANS

Published Date: 03/01/1999

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER, TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2 (SUPERSEDING MIL-S-19500/6B)

Published Date: 02/19/1968

SEMICONDUCTOR DEVICE, DIODE, TYPE 1N560 AND 1N561 (NAVY) (SUPERSEDING MIL-S-19500/167A)

Published Date: 09/20/2004

Letter symbols to be used in electrical technology - Control technology

Published Date: 06/06/2007

International Electrotechnical Vocabulary - Part 732: Computer network technology

Published Date: 04/29/2009

Electrical installations in ships - Part 510: Special features - High-voltage shore connection systems

Published Date: 04/27/2004

Surge arresters - Part 7: Glossary of terms and definitions from IEC publications 60099-1, 60099-4, 60099-6, 61643-1, 61643-12, 61643-21, 61643-311, 61643-321, 61643-331 and 61643-341

Published Date: 01/22/2008

Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)

Published Date: 01/22/2008

Mechanical standardization of semiconductor devices - Part 6-19: Measurement methods of package warpage at elevated temperature and the maximum permissible warpage