MIL MIL-PRF-19500/630C PDF

Published Date: 10/09/2018

Semiconductor Device, Field Effect, Radiation Hardened Transistor, P-Channel, Silicon, Types 2N7389, 2N7390, 2N7389U, 2N7389U5, and 2N7390U, 2N7390U5, JANTXV, R, and F and JANS, R, and F

Published Date: 12/19/2007

SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F(SUPERSEDING MIL-PRF-19500/630D)

Published Date: 03/30/2007

SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F(SUPERSEDING MIL-PRF-19500/630C)

Published Date: 11/07/2003

SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F, AND JANS, R, AND F (SUPERSEDING MIL-PRF-19500/630B)(S/S BY MIL-PRF-19500/630D)

Published Date: 12/22/1997

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U JANTXV, R, AND F AND JANS, R AND F (SUPERSEDING MIL-S-19500/630A) (S/S BY MIL-PRF-19500/630C)

Published Date: 05/02/1997

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D, R, AND F AND JANS M, D, R, AND F (SUPERSEDING MIL-S-19500/630) (S/S BY MIL-PRF-19500/630B)

Published Date: 05/10/1996

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D AND R AND JANS M, D AND R (S/S BY MIL-PRF-19500/630A)

Published Date: 08/28/2019

Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, and AR Versions, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124RA, 1N1126RA, 1N1128RA , 1N3649R, and 1N3650R, JAN Only

Published Date: 05/11/2018

SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THROUGH 1N5476B, AND 1N5461C THROUGH 1N5476C JAN, JANTX, AND JANTXV

Published Date: 05/23/2016

Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261 and 2N7262, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 01/14/1964

SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263 (SUPERSEDING MIL-S-19500/191)

Published Date: 12/31/1988

IEEE Guide for the Statistical Analysis of Thermal Life Test Data

Published Date: 12/15/1980

IEEE Standard for Shunt Power Capacitors

Published Date: 04/06/1961

ANSI/IEEE Radio Interference: Methods of Measurement of Conducted Interference Output to the Power Line from FM and Television Broadcast Receivers in the Range of 300 kHz to 25 MHz

Published Date: 1968

USA Standard Test Code for Distribution, Power and Regulating Transformers, and Shunt Reactors

Published Date: 12/29/1975

IEEE Standard for Graphic Symbols for Electrical and Electronics Diagrams (Including Reference Designation Letters)

Published Date: 09/12/1986

American National Standard - Supplement to Graphic Symbols for Electrical and Electronics Diagrams