MIL MIL-PRF-19500/631C PDF

Published Date: 10/26/2019

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7396, 2N7397 AND, 2N7398, JANSD AND JANSR

Published Date: 03/09/2004

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7396, 2N7397 AND, 2N7398, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/631A)

Published Date: 08/20/1998

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECT) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7395, 2N7396, 2N7397, AND 2N7398 JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/631) (S/S BY MIL-PRF-19500/631B)

Published Date: 11/29/1996

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7395, 2N7396, 2N7397 AND 2N7398 JANTXD, -R, JANTXVD, -R, AND JANSD, -R (S/S BY MIL-PRF-19500/631A)

Published Date: 06/19/2015

Transistor, PNP, Silicon, Power Encapsulated (Through Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Device Types 2N3740 AND 2N3741 Quality Levels JAN, JANTX, JANTXV, JANS, JANHC,and JANKC

Published Date: 01/04/1994

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N5712, 1N5712-1, AND 1N5712UR-1 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC (SUPERSEDING MIL-S-19500/445B) (S/S BY MIL-PRF-19500/445D)

Published Date: 07/10/2020

Transistor, Darlington, PNP Silicon, High-Power Type 2N7371 JAN, JANTX, JANTXV, and JANS

Published Date: 08/01/1997