MIL MIL-PRF-19500/642 PDF

MIL MIL-PRF-19500/642 PDF

Name:
MIL MIL-PRF-19500/642 PDF

Published Date:
04/18/1997

Status:
Active

Description:

SEMI. DEVICE DIODE SILICON POWER RECTIFIER DUAL COMMON CATHODE ANODE CENTER TAP ULTRAFAST TYPES 1N6762 -1N6765 & 1N6762R-1N6765R JANTX, JANTXV, AND JANS (S/S BY MIL-PRF-19500/642A)

Publisher:
Military Specifications and Standards

Document status:
Active

Format:
Electronic (PDF)

Delivery time:
10 minutes

Delivery time (for Russian version):
200 business days

SKU:

Choose Document Language:
$7.2
Need Help?

File Size : 1 file , 55 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 9
Published : 04/18/1997

History

MIL MIL-PRF-19500/642E
Published Date: 06/06/2018
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
$8.7
MIL MIL-PRF-19500/642D
Published Date: 08/24/2007
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
$7.2
MIL MIL-PRF-19500/642C
Published Date: 08/04/2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS(SUPERSEDING MIL-PRF-19500/642B)
$7.2
MIL MIL-PRF-19500/642B
Published Date: 10/24/2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R JANTX, JANTXV, AND JANS(SUPERSEDING MIL-PRF-19500/642A)(S/S BY MIL-PRF-19500/642C)
$7.2
MIL MIL-PRF-19500/642A
Published Date: 01/23/2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 - 1N6765 AMD 1M6762R - 1N6765R JANTX JANTXV AND JANS (SUPERSEDING MIL-PRF-19500/642)(S/S BY MIL-PRF-19500/642B)
$7.2
MIL MIL-PRF-19500/642
Published Date: 04/18/1997
SEMI. DEVICE DIODE SILICON POWER RECTIFIER DUAL COMMON CATHODE ANODE CENTER TAP ULTRAFAST TYPES 1N6762 -1N6765 & 1N6762R-1N6765R JANTX, JANTXV, AND JANS (S/S BY MIL-PRF-19500/642A)
$7.2

Related products

QPL QPL-19500-143
Published Date: 04/30/1998
SEMICONDUCTOR DEVICE (SUPERSEDING QPL-19500-142) (S/S BY QML-19500-1)
$11.4
MIL MIL-PRF-19500/586M
Published Date: 12/15/2017
Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, and 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
$8.7
MIL MIL-PRF-19500/627C
Published Date: 07/23/2014
Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, and JANS
$3.6

Best-Selling Products

RUREGS SNIP 1.04.03 PART I SEC A 1-6
Published Date: 01/01/1991
СНиП 1.04.03-85* Нормы продолжительности строительства и задела в строительстве предприятий, зданий и сооружений. Часть I. (Общие положения. Раздел А (подразделы 1-6))
$8.4
RUREGS SNIP 1.04.03 PART I SEC A 10-13
Published Date: 01/01/1991
СНиП 1.04.03-85* Нормы продолжительности строительства и задела в строительстве предприятий, зданий и сооружений. Часть I. (Раздел А (подразделы 10-13))
$7.8
RUREGS SNIP 1.04.03 PART I SEC A 14-24
Published Date: 01/01/1991
СНиП 1.04.03-85* Нормы продолжительности строительства и задела в строительстве предприятий, зданий и сооружений. Часть I. (Раздел А (подразделы 14-24))
$7.5
RUREGS SNIP 1.04.03 PART I SEC A 7-10
Published Date: 01/01/1991
СНиП 1.04.03-85* Нормы продолжительности строительства и задела в строительстве предприятий, зданий и сооружений. Часть I. (Раздел А (подразделы 7-10))
$8.7
RUREGS SNIP 1.04.03 PART II SEC B 1-5
Published Date: 01/01/1991
СНиП 1.04.03-85* Нормы продолжительности строительства и задела в строительстве предприятий, зданий и сооружений. Часть II (Раздел Б (подразделы 1-5))
$6.3
RUREGS SNIP 1.04.03 PART II SEC B 1-9
Published Date: 01/01/1991
СНиП 1.04.03-85* Нормы продолжительности строительства и задела в строительстве предприятий, зданий и сооружений. Часть II (Раздел В (подразделы 1-9), Раздел Г)
$7.5