MIL MIL-PRF-19500/644A PDF

Published Date: 02/26/2016

Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Through Hole Mount Package Types 1N6768 Through 1N6771, Quality Levels JAN, JANTX, JANTXV, and JANS

Published Date: 08/16/1998

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/644)

Published Date: 04/13/2020

Semiconductor Device, Transistor, NPN, Silicon, Power Darlington Type 2N7370, JAN, JANTX, JANTXV, and JANS

Published Date: 02/26/1968

SEMICONDUCTOR, TRANSISTOR, NPN, GERMANIUM, POWER TYPE 2N326 (SUPERSEDING MIL-S-19500/40A)

Published Date: 07/30/2015

Transistor, NPN, Silicon, Power Switching, Types 2N5664, 2N5665, 2N5666, and 2N5667, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 07/15/2012

Health and safety in welding and allied processes - Laboratory method for sampling fume and gases - Part 6: Procedure for quantitative determination of fume and gases from resistance spot welding - Technical Corrigendum 1 (ISO/TS 15011-6:2012/Cor 1:2012)