Semiconductor Device, Transistor, High Voltage, Field Effect, N-Channel, Silicon, Type 2N7387 and 2N7387U1, JAN, JANTX, JANTXV, and JANS

Publisher:
Military Specifications and Standards

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Active

Format:

Electronic (PDF)

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10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, power MOSFET transistor, with avalanche energy maximum ratings (EAS ) and maximum avalanche current (IAS). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

File Size :	1 file , 210 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	16
Published :	12/06/2013

MIL MIL-PRF-19500/652C PDF

Semiconductor Device, Transistor, High Voltage, Field Effect, N-Channel, Silicon, Type 2N7387 and 2N7387U1, JAN, JANTX, JANTXV, and JANS

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