Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Types 2N7424U, 2N7425U, and 2N7426U, JANTXV and JANS

Publisher:
Military Specifications and Standards

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Active

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Electronic (PDF)

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10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for a P-Channel, enhancement-mode,MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided.

File Size :	1 file , 690 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	25
Published :	09/18/2015

MIL MIL-PRF-19500/655G PDF

Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Types 2N7424U, 2N7425U, and 2N7426U, JANTXV and JANS

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