Semiconductor Device, Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Types 2N7422, 2N7422U, 2N7423, and 2N7423U, JANTXVR and F and JANSR and F

Publisher:
Military Specifications and Standards

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Active

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Electronic (PDF)

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10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

File Size :	1 file , 300 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	22
Published :	03/11/2013

MIL MIL-PRF-19500/662E PDF

Semiconductor Device, Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Types 2N7422, 2N7422U, 2N7423, and 2N7423U, JANTXVR and F and JANSR and F

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