Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

File Size :	1 file , 300 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	22
Published :	02/23/2013

MIL MIL-PRF-19500/663E PDF

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H

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