Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7468 and 2N7469 JANTXVR, F, G and H and JANSR, F, G and H

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANS and JANTXV product assurance levels.

File Size :	1 file , 240 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	21
Published :	08/19/2010

MIL MIL-PRF-19500/673B PDF

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7468 and 2N7469 JANTXVR, F, G and H and JANSR, F, G and H

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