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MIL MIL-PRF-19500/676E PDF

MIL MIL-PRF-19500/676E PDF

Name:
MIL MIL-PRF-19500/676E PDF

Published Date:
12/13/2013

Status:
Active

Description:

Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR

Publisher:
Military Specifications and Standards

Document status:
Active
Format:
Electronic (PDF)
Delivery time:
10 minutes
Delivery time (for Russian version):
200 business days
SKU:
Choose Document Language:
$5.4
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This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
File Size : 1 file , 330 KB
Note : This product is unavailable in Ukraine, Russia, Belarus
Number of Pages : 25
Published : 12/13/2013

History

MIL MIL-PRF-19500/676G
MIL MIL-PRF-19500/676G
Published Date: 06/07/2018
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
$8.7
MIL MIL-PRF-19500/676F
MIL MIL-PRF-19500/676F
Published Date: 05/09/2014
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
$5.4
MIL MIL-PRF-19500/676E
MIL MIL-PRF-19500/676E
Published Date: 12/13/2013
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
$5.4
MIL MIL-PRF-19500/676D
MIL MIL-PRF-19500/676D
Published Date: 12/11/2007
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
$8.7
MIL MIL-PRF-19500/676C
MIL MIL-PRF-19500/676C
Published Date: 12/22/2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/676B)
$8.7
MIL MIL-PRF-19500/676B
MIL MIL-PRF-19500/676B
Published Date: 09/04/2003
SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7465T3 2N7466T3 US SUFFIXES JANTXVR JANSR (SUPERSEDING MIL-PRF-19500/676A) (S/S BY MIL-PRF-19500/676C)
$8.7
MIL MIL-PRF-19500/676A
MIL MIL-PRF-19500/676A
Published Date: 02/20/2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/676) (S/S BY MIL-PRF-19500/676B)
$8.7
MIL MIL-PRF-19500/676
MIL MIL-PRF-19500/676
Published Date: 02/18/2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N466T3 AND U3 SUFFIXES JANTXVR AND JANSR (S/S BY MIL-PRF-19500/676A)
$8.7

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