Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7472, 2N7473, and 2N7474, JANTXVR and JANSR

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (ÛÏRÛ and ÛÏFÛ) are provided for JANTXV product assurance level. See 6.7 for JANHC and JANKC die versions.

File Size :	1 file , 34 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	1
Published :	11/02/2015

MIL MIL-PRF-19500/684E Notice 1 - Validation PDF

Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7472, 2N7473, and 2N7474, JANTXVR and JANSR

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