Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR

Publisher:
Military Specifications and Standards

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Active

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Electronic (PDF)

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10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.

File Size :	1 file , 370 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	23
Published :	10/16/2014

MIL MIL-PRF-19500/685G PDF

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR

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