MIL MIL-PRF-19500/687 PDF

Published Date: 04/28/2016

Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

Published Date: 12/18/2013

Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

Published Date: 07/12/2004

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R (SUPERSEDING MIL-PRF-19500/687)

Published Date: 03/14/2001

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7509, 2N7510, AND 2N7511 JANTXVD, R AND JANSD, R (S/S BY MIL-PRF-19500/687A)

Published Date: 03/09/2006

SEMICONDUCTOR DEVICE, POWER SWITCHING REGULATOR ASSEMBLY(SUPERSEDING DSCC 90024B)

Published Date: 02/10/2005

SEMICONDUCTOR DIODE, SILICON, HIGH-VOLTAGE TYPE JAN1N2361 MA DC 400 (SEE BASE FOR INACTIVATION NOTICE) (SUPERSEDING MIL-S-19500/187A)

Published Date: 08/31/2015

Transistor, PNP, Silicon, Low Power Encapsulated (Through-Hole and Surface Mount Packages) and Un-Encapsulated (DIE), Radiation and Non-Radiation Hardened, Types 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 10/20/2020

Transistor, PNP, Silicon, High-Power, Through-Hole Package, Types 2N4399 and 2N5745, JAN, JANTX, JANTXV, and JANS

Published Date:

Manufacturer Disclosure Statement for Medical Device Security

Published Date: 11/01/2013

Manufacturer Disclosure Statement for Medical Device Security