Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H

Publisher:
Military Specifications and Standards

Document status:

Active

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Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.

File Size :	1 file , 290 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	20
Published :	05/15/2013

MIL MIL-PRF-19500/697E PDF

Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H

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