MIL MIL-PRF-19500/701A PDF

Published Date: 01/21/2020

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7491T2, 2N7492T2, and 2N7493T2, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 01/27/2014

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7491T2, 2N7492T2, and 2N7493T2, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 01/18/2011

Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7491T2, 2N7492T2, and 2N7493T2, JANTXVR, F, G, and H and JANSR, F, G, and H

Published Date: 07/05/2004

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2 JANTXVR, F, G, AND H AND JANSR, F, G, AND H (SUPERSEDING MIL-PRF-19500/701)

Published Date: 12/10/2001

SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N-CHANNEL SILICON TYPES 2N7491T2 2N7492T2 2N7493T2 JANTXVR F G H JANSR F G H

Published Date: 06/25/2015

Transistor, NPN, Silicon, Switching, Types 2N2218, and 2N2219, JAN, JANTX, JANTXV, and JANS

Published Date: 06/02/2017

Semiconductor Device, Transistor, NPN, Silicon, Switching, Types 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507, 2N3507L, 2N3507A, 2N3507AL, 2N3507U4, AND 2N3507AU4

Published Date: 11/24/2014

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR

Published Date: 10/23/2017

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7545U3, 2N7546U3, 2N7547T3, and 2N7548T3, JANTXVR, F, G, H and JANSR, F, G, H

Published Date: 12/01/1993

Published Date: 12/01/2000

Published Date: 10/01/1998