Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias) for use in particular power-switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type.

File Size :	1 file , 240 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	22
Published :	08/23/2010

MIL MIL-PRF-19500/706B PDF

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR

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