Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7545U3, 2N7546U3, 2N7547T3, and 2N7548T3, JANTXVR, F, G, H and JANSR, F, G, H

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MILÛÒPRFÛÒ19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

File Size :	1 file , 570 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	25
Published :	07/18/2014

MIL MIL-PRF-19500/712E PDF

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7545U3, 2N7546U3, 2N7547T3, and 2N7548T3, JANTXVR, F, G, H and JANSR, F, G, H

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