Semiconductor Device, Field Effect Radiation Hardened Quad Transistor, N-Channel and P-Channel, Silicon, Types 2N7518 and 2N7518U, JANTXVR, F, and JANSR, F

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).

File Size :	1 file , 310 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	20
Published :	07/01/2013

MIL MIL-PRF-19500/739A PDF

Semiconductor Device, Field Effect Radiation Hardened Quad Transistor, N-Channel and P-Channel, Silicon, Types 2N7518 and 2N7518U, JANTXVR, F, and JANSR, F

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