Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H

Publisher:
Military Specifications and Standards

Document status:

Active

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Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

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This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each encapsulated device type (JANTXV and JANS) as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 foR unencapsulated devices, JANHC and JANKC die versions.

File Size :	1 file , 250 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	20
Published :	01/28/2015

MIL MIL-PRF-19500/743C PDF

Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H

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