Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

File Size :	1 file , 320 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	19
Published :	08/27/2012

MIL MIL-PRF-19500/745D PDF

Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF

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