Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072, and 1N7078 JAN, JANTX, JANTXV, and JANS

Publisher:
Military Specifications and Standards

Document status:

Active

Format:

Electronic (PDF)

Delivery time:

10 minutes

Delivery time (for Russian version):

200 business days

SKU:

This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device.

File Size :	1 file , 240 KB
Note :	This product is unavailable in Ukraine, Russia, Belarus
Number of Pages :	16
Published :	03/23/2012

MIL MIL-PRF-19500/765 PDF

Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072, and 1N7078 JAN, JANTX, JANTXV, and JANS

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