MIL MIL-S-19500/241F PDF

Published Date: 06/04/2018

Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 01/30/2015

Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 08/30/2014

Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 11/14/2013

Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 01/25/2010

Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595UB, 1N3595UB2, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 06/10/2008

Semiconductor Device, Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595-1, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, and 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

Published Date: 04/19/2007

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595-1, 1N3595US, AND 1N3595UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC(SUPERSEDING MIL-PRF-19500/241H)

Published Date: 05/01/2000

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/241G)

Published Date: 04/07/1997

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE TYPES 1N3595US, 1N3595UR, 1N3595UR-1 AND 1N3595US-1 JAN, JANX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-S-19500/241F) (S/S BY MIL-PRF-19500/241H)

Published Date: 02/23/1994

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, GENERAL PURPOSE, SWITCHING TYPES 1N3595, 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, AND 1N3595US-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC (SUPERSEDING MIL-S-19500/241E) (S/S BY MIL-PRF-19500/241G)

Published Date: 06/18/2020

Transistor, NPN, Silicon, Power, Device Type 2N3739, JAN, JANTX, and JANTXV

Published Date: 02/28/2019

Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662, and 2N5663, JAN, JANTX, and JANTXV

Published Date: 01/01/1997

Erection of Power Installations with Nominal Voltages up to 1000 V - Part 4: Protection for Safety; Chapter 41: Protection Against Electric Shock (IEC 60364-4-41:1992, modified)

Published Date: 02/01/1996

Erection of Power Installations with Nominal Voltages up to 1000 V - Part 4: Protection for Safety; Chapter 47: Application of Protective Measures for Safety (IEC 60364-4-47 modified)

Published Date: 12/01/1988

Electrical Apparatus for Explosive Gas Atmospheres - Revision of IEC 79-1 - Construction and Test of Flameproof Enclosures of Electrical Apparatus

Published Date: 01/01/1986

Insulating and Sheathing and Compounds for Cables and Flexible Cords; PVC Insulating and Compounds (June)

Published Date: 01/01/1986

Insulating and Sheathing Compounds for Cables and Flexible Cords; PVC Sheathing Compounds (July)

Published Date: 01/01/1982

Insulating and Sheathing Compounds for Cables and Flexible Cords; Rubber Sheathing Compounds (July)