MIL MIL-S-19500/283D PDF

Published Date: 05/01/2018

Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4370A 1 through 1N4372A-1 and 1N746A-1 through 1N759A-1, 1N4370AUR-1 through 1N4372AUR-1 and 1N746AUR-1 through 1N759AUR-1

Published Date: 01/16/2019

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION

Published Date: 10/28/2019

Semiconductor Device, Field Effect Radiation Hardened Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR

Published Date: 08/05/1983

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5241, JAN, JANTX & JANTXV (SUPERSEDING MIL-S-19500/414A) (S/S BY DSCC 99009)

Published Date: 1997

Addendum b - Energy Conservation in Existing Buildings

Published Date: 1995

Standard 100-1995 -- Energy Conservation in Existing Buildings (ANSI Approved/IESNA cosponsored)

Published Date: 2006

Standard 100-2006 -- Energy Conservation in Existing Buildings (ANSI/IES Approved)

Published Date: 2017

Addenda a to Standard 100-2015 -- Energy Efficiency in Existing Buildings (ANSI Approved/IES Co-sponsored)

Published Date: 2017

Addenda b to Standard 100-2015 -- Energy Efficiency in Existing Buildings (ANSI Approved/IES Co-sponsored)

Published Date: 2017

Addenda c to Standard 100-2015 -- Energy Efficiency in Existing Buildings (ANSI Approved/IES Co-sponsored)